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The thermal properties, namely, the thermal stability and the activation energy, of H-point defect complexes in Si were investigated. Specimens were doped with H by annealing in H2 gas followed by quenching. Then, they were irradiated by 3 MV electrons at room temperature. Subsequently, they were annealed isochronally or isothermally. Optical absorption spectra of H-point defect complexes were measured at 7 K. Due to isochronal annealing, the 2122, 1838, and 817 cm-1 peaks disappeared below 200 °C. On the other hand, 2223 and 2166 cm-1 peaks formed at above 125 and 175 °C, respectively. From isothermal annealing experiments, the binding energies of H2* (1838 cm-1 peak) and I (I: a self-interstitial) H2 or V (V: a vacancy) H2 (1987 and 1990 cm-1 peaks) were determined to be about 1.5 and 2.0 eV, respectively. The generation of the 2223 cm-1 peak was due to reaction between H2 and the 2122 cm-1 defect. © 1999 American Institute of Physics.
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