By Topic

Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Rantamaki, R. ; Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland ; Tuomi, T. ; Zytkiewicz, Z.R. ; Domagala, J.
more authors

Author(s)

Rantamaki, R.
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland
Tuomi, T. ; Zytkiewicz, Z.R. ; Domagala, J. ; McNally, P.J. ; Danilewsky, A.N.