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We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1-XGeX films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition–temperature and composition–pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily. © 1998 American Institute of Physics.
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