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Effects of native defects on carrier concentrations in heavily Si-doped and adjoining lightly doped GaAs layers

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3 Author(s)
Fushimi, Hiroshi ; NTT LSI Laboratories, 3-1, Morinosato-Wakamiya, Atsugi-Shi, Kanagawa 243-01, Japan ; Shinohara, Masanori ; Wada, Kazumi

Author(s)

Fushimi, Hiroshi
NTT LSI Laboratories, 3-1, Morinosato-Wakamiya, Atsugi-Shi, Kanagawa 243-01, Japan
Shinohara, Masanori ; Wada, Kazumi