Skip to Main Content
| Create Account
| Sign In
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1063/1.363899
We have studied both continuous-wave and time-resolved photoluminescence from type-II GaP/AlP/GaP quantum wells with thickness of 1, 2, 3, 5, and 8 monolayers. Highly efficient no-phonon luminescence was observed at low temperatures, indicating long-lived temporal behavior. Photoluminescence results indicated that the lowest confined electron states in the AlP wells were the Xz states. Nonexponential time decay of the no-phonon line suggested that the high efficiency of luminescence was due to the localization of indirect excitons by fluctuations in the potential at the interfaces. The effective interface roughness, which gave rise to the in-plane localization of the excitons, was much less than 1 atomic layer. A fit to the observed type-II transition energies gave a value for the conduction band offset of 0.38 eV for the GaP/AlP heterointerface. © 1997 American Institute of Physics.
Journal of Applied Physics
Date of Publication:
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.