The dependence of the contact potential difference (CPD) reading on the ac driving amplitude in scanning Kelvin probe microscope (SKPM) hinders researchers from quantifying true material properties. We show theoretically and demonstrate experimentally that an ac driving amplitude dependence in the SKPM measurement can come from a systematic error, and it is common for all tip sample systems as long as there is a nonzero tracking error in the feedback control loop of the instrument. We further propose a methodology to detect and to correct the ac driving amplitude dependent systematic error in SKPM measurements. The true contact potential difference can be found by applying a linear regression to the measured CPD versus one over ac driving amplitude data. Two scenarios are studied: (a) when the surface being scanned by SKPM is not semiconducting and there is an ac driving amplitude dependent systematic error; (b) when a semiconductor surface is probed and asymmetric band bending occurs when the systematic error is present. Experiments are conducted using a commercial SKPM and CPD measurement results of two systems: platinum-iridium/gap/gold and platinum-iridium/gap/thermal oxide/silicon are discussed.