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The technique of high‐temperature cheap thermal resistor fabrication, based on polycrystal and fast neutron irradiated silicon carbide single crystals, is presented. The operating temperature range is 20–600 °C for polycrystal devices and 200–800 °C for single crystal devices and coefficient B in the expression R=R0 exp(B/T) is equal to 4500 and 10 000, respectively. © 1996 American Institute of Physics.
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