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Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110)

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6 Author(s)
Melendez-Lira, M. ; Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 14-740, México 07000, México D.F. ; Santana-Aranda, M.A. ; Lopez-Lopez, M. ; Tamura, M.
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Author(s)

Melendez-Lira, M.
Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 14-740, México 07000, México D.F.
Santana-Aranda, M.A. ; Lopez-Lopez, M. ; Tamura, M. ; Yodo, T. ; Vidal, M.A.