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Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal–oxide–semiconductor field effect transistor

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3 Author(s)
Ahmed, S.S. ; School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 ; Denton, J.P. ; Neudeck, Gerold W.

Author(s)

Ahmed, S.S.
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907
Denton, J.P. ; Neudeck, Gerold W.