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Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

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9 Author(s)
Kuo, H.C. ; Department of Electrical and Computer Engineering, Microelectronics Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 ; Ahmari, D. ; Moser, B.G. ; Mu, J.
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Author(s)

Kuo, H.C.
Department of Electrical and Computer Engineering, Microelectronics Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
Ahmari, D. ; Moser, B.G. ; Mu, J. ; Hattendorf, M. ; Scott, D. ; Meyer, R. ; Feng, M. ; Stillman, G.E.