Skip to Main Content
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1116/1.589979
Design results are presented for the quantum parallel laser (QPL) at 1–20 μm wavelengths and the cryogenic 4–20 μm quantum cascade laser (QCL). For 1–2 μm lasing, the optimum multiple quantum well heterostructures are Si quantum wells (QWs) confined by wide-gap lattice-matched semiconductor layers, especially the Si/ZnS, Si/BeSeTe, Si/γ–Al2O3, Si/CeO2, and Si/SiOx systems (SiOx is a crystalline suboxide). The electrically pumped 300 K unipolar p-i-p. QPL consists of tightly coupled QWs exhibiting coherent transport of carriers on superlattice (SL) minibands. A good QPL candidate is the symmetrically strained Gen–Sin SL grown on relaxed Si0.5Ge0.5. Local-in-k population inversion is engineered between two valence minibands. Our calculations indicate that the p-i-p QCL is feasible in Ge–Si or in lattice-matched Si0.63Ge0.33C0.04/Si. The oscillator strength fz=0.1 calculated for the 8 ML×8 ML Si/ZnS zone-folded SL is insufficient for 1.1 μm band-to-band lasing; however, the in-plane dispersion of Si QWs in Si/ZnS SLs shows valence subbands that are sufficiently nonparabolic for local-in-k lasing in QPLs and QCLs. © 1998 American Vacuum Soc- - iety.
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.