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Effect of crystalline defects on electrical properties of heavily Si‐doped strain‐relaxed In0.5Ga0.5As layers grown by molecular beam epitaxy on GaAs

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2 Author(s)
Chang, James S.C. ; Hewlett Packard, Microwave Technology Division, Santa Rosa, California 95403 ; Patterson, George A.

Author(s)

Chang, James S.C.
Hewlett Packard, Microwave Technology Division, Santa Rosa, California 95403
Patterson, George A.