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Channel-length and gate-bias dependence of contact resistance and mobility for In2O3 nanowire field effect transistors

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6 Author(s)
Jo, Gunho ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea ; Maeng, Jongsun ; Kim, Tae-Wook ; Hong, Woong-Ki
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Author(s)

Jo, Gunho
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
Maeng, Jongsun ; Kim, Tae-Wook ; Hong, Woong-Ki ; Choi, Byung-Sang ; Takhee Lee