Samples of sputter‐deposited Al/Si/Cu very large scale integration (VLSI) metallization 1.4‐μ thick having 1 wt. % Si and 0.0, 0.2, 0.4, and 0.8 wt. % Cu with and without a forming gas (N2/H2) 450 °C anneal for 1 h were analyzed quantitatively using Auger electron spectroscopy (AES) in a signal averaged depth profile mode. These data were correlated and compared with high resolution secondary ion mass spectroscopic (SIMS) depth profiles of the same samples. The purpose of these investigations was to study the feasibility of SIMS as a quantitative measure of Si and Cu concentrations in Al/Si/Cu VLSI metallization. In addition, these data were used to provide a preliminary description of the spatially averaged inhomogeneous distribution of Cu and Si in Al/Si/Cu metallization pre‐ and postanneal.