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click on this link:http://dx.doi.org/+10.1063/1.125587
1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm2 was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T0) of 92 and 54 K for operating temperatures below and above 75 °C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/ °C. © 2000 American Institute of Physics.
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