Skip to Main Content
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1063/1.123453
A method for preparing shallow dopant distributions via solid-phase epitaxial growth (SPEG) following amorphization by low-energy Si self-ion implantation leaves defects that can lead to unwanted dopant impurity diffusion. The double implant method for SPEG [O. W. Holland etal, J. Electron. Mater. 25, 99 (1996)] uses both low- and high-energy Si self-ion implantation to remove most of the interstitials. Nevertheless, we find that measurable crystalline imperfections remain following the SPEG annealing step. Measurements of defect profiles using variable-energy positron spectroscopy show that there are divacancy-impurity complexes in the SPEG layer and V6 and larger vacancy clusters near the SPEG-crystalline interface. These measurements should be useful for modeling the diffusion of dopant atoms and for fine tuning the double implant parameters. © 1999 American Institute of Physics.
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.