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Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal–oxide–semiconductor field-effect transistors

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3 Author(s)
Avellan, Alejandro ; Institute for Microelectronics, Technical University of Hamburg–Harburg, D-21071 Hamburg, Germany ; Krautschneider, W. ; Schwantes, Stefan

Author(s)

Avellan, Alejandro
Institute for Microelectronics, Technical University of Hamburg–Harburg, D-21071 Hamburg, Germany
Krautschneider, W. ; Schwantes, Stefan