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Undoped and boron-doped SiC layers are grown on hexagonal SiC(0001) substrates by means of solid-source molecular-beam epitaxy. Hexagonal 4H– and 6H–SiC layers are grown homoepitaxially via step-controlled epitaxy, whereas the cubic 3C–SiC is grown pseudomorphically via nucleation and subsequent step flow. The low-temperature photoluminescence spectra only show the well-known emission lines of the so-called D1 center. The line positions are compared with results of first-principles calculations. The growth conditions, the line shape, and the line shift with the polytype support an interpretation as bound-exciton recombination at a native-defect complex that contains a Si vacancy. © 2001 American Institute of Physics.
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