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Reflection high energy electron diffraction (RHEED) intensity measurements reveal that the strain in a Si1-xGex layer on a vicinal Si(001) surface converts a (1×2) domain dominated step configuration to a (2×1) domain dominated one. The dependence of the effect on the Ge content is similar to the dependence of the critical thickness of the pseudomorphic growth of Si1-xGex layers on Ge content. No conversion effect has been observed on exact Si(001) substrates. © 1996 American Institute of Physics.
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