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The surface morphology of Cz Si(100) after H2 bake has been investigated. It is found that at temperatures as low as 950 °C, and bake times as short as 25 s, steps and terraces are formed by the H2 annealing. The evolution of the step and terrace structure can be clearly seen by virtue of temperature differences across the wafer. The steps are two‐atomic layer steps at straight edges, whereas one‐atomic layer steps occur when the edge line is irregular. © 1996 American Institute of Physics.
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