Skip to Main Content
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1063/1.1595719
A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford backscattering spectrometry show that surface functionalization by pre-exposure to 108 Langmuir trimethylaluminum at 300 °C leads to enhanced nucleation and to nearly linear growth kinetics of the high-permittivity gate dielectrics aluminum oxide and hafnium oxide. © 2003 American Institute of Physics.
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.© Copyright 2015 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.