We report on epitaxial lateral overgrowth of Si on oxidized (111) Si wafers by liquid phase epitaxy. The growth starts in oxide‐free seeding windows and proceeds laterally over the SiO2. Growth effectively ceases when (111) sidewalls form. This observation allows the development of a geometrical model that, for the first time, explains the observed dependence of the overgrowth width on the orientation of the seeding windows. We obtain a maximum overgrowth width of 120–130 μm and a maximum aspect ratio of 40:1. Transmission electron microscopy reveals no crystallographic defects in the overgrown lamellae.