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Ohmic contacts to n‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing

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5 Author(s)
Chen, C.L. ; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 ; Mahoney, L.J. ; Woodhouse, J.D. ; Finn, M.C.
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Author(s)

Chen, C.L.
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Mahoney, L.J. ; Woodhouse, J.D. ; Finn, M.C. ; Nitishin, P.M.