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Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy

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3 Author(s)
Ulloa, J.M. ; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven, The Netherlands ; Koenraad, P.M. ; Hopkinson, M.

Author(s)

Ulloa, J.M.
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven, The Netherlands
Koenraad, P.M. ; Hopkinson, M.