A n-i-p-p-i-n photodiode based on type-II InAs/GaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10μm, presented quantum efficiencies (QEs) of 47% and 39% at 77K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5μm were measured as high as 40% and 39% at 77K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50mV bias.