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Impact of in situ carbon doping on implant damage and strain relaxation of epitaxial silicon germanium layer on silicon

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6 Author(s)
Liu, J.P. ; Technology Development, Chartered Semiconductors Manufacturing Ltd., Singapore ; Domenicucci, A. ; Madan, A. ; Li, J.
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Author(s)

Liu, J.P.
Technology Development, Chartered Semiconductors Manufacturing Ltd., Singapore
Domenicucci, A. ; Madan, A. ; Li, J. ; Holt, J. ; Sudijono, J.