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An iterative approximation for the charge-storage capacity of MOS capacitors with an application to DRAM trench capacitor memory cells

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2 Author(s)
Perry, R.J. ; Coll. of Eng., Florida State Univ., Tallahassee, FL, USA ; Uyemura, J.

Author(s)

Perry, R.J.
Coll. of Eng., Florida State Univ., Tallahassee, FL, USA
Uyemura, J.