The generation and propagation of single event transients (SET) is measured and modeled in SOI inverter chains with different designs. SET propagation in inverter chains induces significant modifications of the transient width. In some cases, a "propagation-induced pulse broadening" (PIPB) effect is observed. Initially narrow transients, less than 200 ps at the struck node, are progressively broadened up to the nanosecond range, with the degree of broadening dependent on the transistor design and the length of propagation. The chain design (transistor size and load) is shown to have a major impact on the transient width modification.