The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for a CdZnTe pixelated detector array. This count-rate is more than twice the highest count-rate ever achieved using a CdZnTe detector array. Such excellent performance was demonstrated for more than 600 individual CdZnTe detector arrays. The 2-D CdZnTe monolithic arrays were 16 x 16 pixel devices with 0.4 mm times 0.4 mm area pixels on a 0.5 mm pitch and were fabricated using 8.7 mm times 8.7 mm times 3.0 mm CdZnTe single crystals grown by the high-pressure, electro-dynamic gradient freeze technique. The CdZnTe detector arrays were bonded to a ceramic substrate with the Z-bondtrade technique. This enabled performance testing of the individual detector arrays before bonding to the read-out ASIC chip. The detector arrays were characterized in a custom designed test system. The measurement and data acquisition system consisted of a 16 times 16 pin probe head and 256-channel read-out electronics controlled by a host PC. We utilized our 8-channel fast bipolar ASIC chip and computer controlled 120 kVp X-ray source. In order to measure the true throughput of the CdZnTe devices a counts correction method was developed and implemented that compensates for the counting system non-linearity caused by pile-up and amplifier shaping time effects. Survey of detector array performance as a function of CdZnTe charge transport properties showed that the maximum achievable count-rate of these detectors strongly depends on the hole charge transport properties of the crystals.