A new technique for designing uniform multistage amplifiers (MAs) for high-frequency applications is introduced. The proposed method uses the multi-peak bandwidth enhancement technique while it employs identical, simple and inductorless stages. The intrinsic capacitances within transistors are exploited by the active negative feedbacks to expand the bandwidth. While all stages of the proposed MA topology are identical, the gain-bandwidth product can be extended several times. Using the proposed topology, a six-stage amplifier in TSMC 0.35-mum CMOS process was designed. Measurement results show that the gain can be varied between 16 and 44 dB within 0.7-3.2-GHz bandwidth with less than 5.2-nV /radicHz noise. Die area of the amplifier is 175 mum times 300 mum.