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Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability

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30 Author(s)
R. I. Hegde ; Adv. Products Res. & Dev. Lab., Freescale Semicond., Inc., Austin, TX ; D. H. Triyoso ; P. J. Tobin ; S. Kalpat
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