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Modeling quantum transport under AC conditions: application to intrinsic high-frequency limits for nanoscale double-gate Si MOSFETs

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3 Author(s)
Fernandez-Diaz, E. ; Dept. d''Enginyeria Electron., Univ. Autonoma de Barcelona, Catalonia, Spain ; Alarcon, A. ; Oriols, X.

Author(s)

Fernandez-Diaz, E.
Dept. d''Enginyeria Electron., Univ. Autonoma de Barcelona, Catalonia, Spain
Alarcon, A. ; Oriols, X.