A buttable 512 × 2 IRCCD line image sensor was developed with Pd2Si Schottky-barrier detectors for operation with passive cooling at 120 K in the shortwave infrared (1.1-2.5 µm) band. This monolithic Silicon line imager has 30-µm detectors with 75 percent fill factor and on-chip CCD multiplexers providing one video output for each 512 detector band. The measured performance of the 512 × 2 Pd2Si IRCCD line imager operating at a temperature of 120 K and optical integration time of 4 ms includes a signal-to-noise ratio of 241 for irradiance of7.2 microW/cm2atgamma = 1.65 microm, a dynamic range of 5000, and modulation transfer function greater than 60 percent at the Nyquist frequency. Belmish-free imagers with 3 percent nonuniformity under illumination and nonlinearity of 1.25 percent were produced. The total power dissipation of the imager chip is 18 mW.