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Physical characterization of hot-electron-induced MOSFET degradation through an improved approach to the charge-pumping technique

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2 Author(s)
Bergonzoni, C. ; SGS-Thomson Microelectronics, Agrate Brianza, Italy ; Dalla Libera, G.


Bergonzoni, C.
SGS-Thomson Microelectronics, Agrate Brianza, Italy
Dalla Libera, G.