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A novel low-voltage N-channel heterostructure dynamic threshold voltage MOSFET (N-HDTMOS) with p-type doped SiGe body

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7 Author(s)
Kawashima, T. ; Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; Hara, Y. ; Kanzawa, Y. ; Sorada, H.
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Author(s)

Kawashima, T.
Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Hara, Y. ; Kanzawa, Y. ; Sorada, H. ; Inoue, A. ; Asai, A. ; Takagi, T.