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A novel double-recessed 0.2-μm T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

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4 Author(s)
Ming-Jyh Hwu ; Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan ; Hsien-Chin Chiu ; Shih-Cheng Yang ; Yi-Jen Chan

Author(s)

Ming-Jyh Hwu
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Hsien-Chin Chiu ; Shih-Cheng Yang ; Yi-Jen Chan