Proton bombardment has been used to boost the on-chip inductor quality factor and to also improve the frequency response. In this paper we demonstrated these advantages using the 0.13/spl mu/m and 0.18/spl mu/m RF CMOS processes. Based on the model, we evaluated how the performance improved using bombardment technology. A simultaneously impressive increase both in the peak Q-value and the optimal frequency have been evidenced due to its significantly reduced substrate parasitic effect as a result of higher substrate resistivity. This can be considered as a solution to integrate inductor on a Si substrate.