A high-density coupled-hard-axis (CHA) destructive readout (DRO) magnetic-film device which yields storage density ≥ 6400 cells per square inch and drive currents compatible with ICs is described. A thin word line design is unique in that its own resistance is used as its termination. This thin word line design permits word line grouping on the substrate level resulting in larger spaced fan-out connections. Its relatively easy manufacturing process as batch fabricated arrays, compared with other comparable high-density memory devices, makes it attractive economically. Extensive experimental data has been obtained as to the disturb margins, signal levels, and keeper effect. In the evaluation of the device performance, the worst case disturb conditions are always applied. At operating conditions, signal levels are in the 2-mV range, disturb margins are ± 35 percent for the unipolar case, and ≥ 50 percent for the bipolar case. Domain-pattern studies were also made to gain further understanding of the device performance and stability relative to its magnetic structure.