Bubble domain memory chips with micron dimension patterns have been fabricated by additive electroplating through photoresist windows using the conductor first processing. Etching defines the detector strips and removes the plating base. The various fabrication steps are described and discussed. The uniformity of the plated films is good and gives a reasonable yield. Nonmagnetic underlayers were plated below the NiFe bars. The gap width could be reduced by overplating the photoresist windows. 4 kbit chips have been fabricated with the processes described.