Improved light-output power of GaN LEDs by selective region activation
Chien-Chih Liu
Yuag-Hsin Chen
Mau-Phon Houng
Yeong-Her Wang
Yan-Kuin Su
Wen-Bin Chen
Shi-Ming Chen
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Taman, Taiwan;
This paper appears in: Photonics Technology Letters, IEEE
Publication Date: June 2004
Volume: 16,
Issue: 6
On page(s): 1444-1446
ISSN: 1041-1135
INSPEC Accession Number: 7976150
Digital Object Identifier: 10.1109/LPT.2004.826786
Posted online: 2004-05-24 13:44:43.0
Abstract
A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost. In the SHRR design, the area under the p-pad metal electrode is selectively given a higher resistance, reducing current flow and light generation under the contact. Under constant current testing, the current normally passing through the SHRR region is instead distributed over the visible (i.e., useful) area of the device, resulting in significantly increased light-output power and luminous efficiency.
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