Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact
S.J. Chang
C.S. Chang
Y.K. Su
R.W. Chuang
W.C. Lai
C.H. Kuo
Y.P. Hsu
Y.C. Lin
S.C. Shei
H.M. Lo
J.C. Ke
J.K. Sheu
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taman, Taiwan;
This paper appears in: Photonics Technology Letters, IEEE
Publication Date: April 2004
Volume: 16,
Issue: 4
On page(s): 1002-1004
ISSN: 1041-1135
INSPEC Accession Number: 7927499
Digital Object Identifier: 10.1109/LPT.2004.824667
Posted online: 2004-04-05 13:18:04.0
Abstract
The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n+-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6×10-3Ω·cm2. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni-Au on n+-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n+-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.
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