C.S. Chang
S.J. Chang
Y.K. Su
C.T. Lee
Y.C. Lin
W.C. Lai
S.C. Shei
J.C. Ke
H.M. Lo
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan;
This paper appears in: Photonics Technology Letters, IEEE
Publication Date: March 2004
Volume: 16,
Issue: 3
On page(s): 750-752
ISSN: 1041-1135
INSPEC Accession Number: 7919467
Digital Object Identifier: 10.1109/LPT.2004.823768
Posted online: 2004-03-03 16:17:04.0
Abstract
Nitride-based light-emitting diodes (LEDs) with textured side walls were fabricated. By using plasma-enhanced chemical vapor deposition SiO2 layer as the etching mask, we successfully etched the nitride epitaxial layers to achieve wavelike side walls. It was found that such wavelike side walls could mainly enhance the light output at the horizontal directions. With a 20-mA current injection, it was found that the output powers of the LED with textured side walls and normal LED were 9.3 and 8.4 mW, respectively. Furthermore, it was found that such textured side walls will not result in a higher operation voltage.
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