Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature
Ru-Chin Tu
Chun-Ju Tun
Shyi-Ming Pan
Chang-Cheng Chuo
J.K. Sheu
Ching-En Tsai
Te-Chung Wang
Gou-Chung Chi
Opto-Electron. & Syst. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan;
This paper appears in: Photonics Technology Letters, IEEE
Publication Date: Oct. 2003
Volume: 15,
Issue: 10
On page(s): 1342-1344
ISSN: 1041-1135
INSPEC Accession Number: 7746538
Digital Object Identifier: 10.1109/LPT.2003.818240
Posted online: 2003-09-23 16:41:51.0
Abstract
The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vapor phase epitaxy system. LEDs with AlGaN EB layers grown at low temperature (LT) were found more effectively to prevent electron overflow than conventional LEDs with an AlGaN one grown at high temperature (HT). The electroluminescent intensity of LEDs with an LT-grown AlGaN layer was nearly three times greater than that of LEDs with an HT-grown AlGaN. Additionally, the LEDs with an LT-grown AlGaN layer in H2 ambient were found to increase the leakage current by three orders of magnitude and reduce the efficiency of emission.
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