InGaN/GaN tunnel-injection blue light-emitting diodes
Wen, T.C.
Chang, S.J.
Wu, L.W.
Su, Y.K.
Lai, W.C.
Kuo, C.H.
Chen, C.H.
Sheu, J.K.
Chen, J.F.
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Jun 2002
Volume: 49,
Issue: 6
On page(s): 1093-1095
ISSN: 0018-9383
References Cited: 15
CODEN: IETDAI
INSPEC Accession Number: 7297369
Digital Object Identifier: 10.1109/TED.2002.1003762
Posted online: 2002-08-07 00:52:22.0
Abstract
A charge asymmetric resonance tunneling (CART) structure was
applied to nitride-based blue light emitting diodes (LEDs) to enhance
their output efficiency. It was found that with a 20-nm-thick
In0.18Ga0.82N electron emitter layer, we could
increase the LED output intensity from 28.3 minicandela (mcd) to 43.2
mcd (i.e., a 53% increase). However, a further increase in electron
emitter layer thickness will reduce the intensity due to relaxation. It
was also found that we could decrease the 20 mA forward voltage from
4.16 V to 3.58 V with a proper electron emitter layer
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