Influence of Si-doping on the characteristics of InGaN-GaN multiplequantum-well blue light emitting diodes
Wu, L.W.
Chang, S.J.
Wen, T.C.
Su, Y.K.
Chen, J.F.
Lai, W.C.
Kuo, C.H.
Chen, C.H.
Sheu, J.K.
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan;
This paper appears in: Quantum Electronics, IEEE Journal of
Publication Date: May 2002
Volume: 38,
Issue: 5
On page(s): 446-450
ISSN: 0018-9197
References Cited: 21
CODEN: IEJQA7
INSPEC Accession Number: 7257760
Digital Object Identifier: 10.1109/3.998615
Posted online: 2002-08-07 00:49:49.0
Abstract
A detailed study on the effects of Si-doping in the GaN barrier
layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs)
has been performed. Compared with unintentionally doped samples, X-ray
diffraction results indicate that Si-doping in barrier layers can
improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs.
It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA
luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier
and an unintentionally doped barrier, respectively. These results
suggests that one can significantly improve the performance of InGaN-GaN
MQW LEDs by introducing Si doping in the GaN barrier layers
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