Direct tunneling-induced floating-body effect in 90-nm pseudo-kink-free PD SOI pMOSFETs with DTMOS-like behavior and low input power consumption
Shiao-Shien Chen
Shiang Huang-Lu
Tien-Hao Tang
Central Res. & Dev. Div., United Microelectron. Corp., Hsinchu, Taiwan;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: April 2004
Volume: 51,
Issue: 4
On page(s): 575- 580
ISSN: 0018-9383
INSPEC Accession Number: 7974544
Digital Object Identifier: 10.1109/TED.2004.824687
Posted online: 2004-03-22 16:54:32.0
Abstract
This paper reports the investigation of the direct tunneling-induced floating-body effect in 90-nm H-gate floating body partially depleted (PD) silicon-on-insulator (SOI) pMOSFETs with dynamic-threshold MOS (DTMOS)-like behavior and low input power consumption. Based on this paper, with the decrease of the gate-oxide thickness, the direct-tunneling current will dominate the floating body potential of H-gate PD SOI pMOSFETs, which makes the floating body potential highly gate voltage dependent like DTMOS behavior with a larger drain current. However, the input power consumption is still kept lower. Simultaneously, the highly gate voltage dependent direct-tunneling current will reduce the influence of the impact ionization current on the neutral region with a higher kink onset-voltage. It contributes to the pseudo-kink-free phenomenon in 90-nm H-gate floating body PD SOI pMOSFETs.
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