Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol: 26 Issue: 1
- Vol: 26 Issue: 2
- Vol: 26 Issue: 3
- Vol: 26 Issue: 4
- Vol: 26 Issue: 5
- Vol: 26 Issue: 6
- Vol: 27 Issue: 1
- Vol: 27 Issue: 2
- Vol: 27 Issue: 3
- Vol: 27 Issue: 4
- Vol: 27 Issue: 5
- Vol: 27 Issue: 6
- Vol: 24 Issue: 1
- Vol: 24 Issue: 2
- Vol: 24 Issue: 3
- Vol: 24 Issue: 4
- Vol: 24 Issue: 5
- Vol: 24 Issue: 6
- Vol: 25 Issue: 1
- Vol: 25 Issue: 2
- Vol: 25 Issue: 3
- Vol: 25 Issue: 4
- Vol: 25 Issue: 5
- Vol: 25 Issue: 6
- Vol: 22 Issue: 1
- Vol: 22 Issue: 2
- Vol: 22 Issue: 3
- Vol: 22 Issue: 4
- Vol: 22 Issue: 5
- Vol: 22 Issue: 6
- Vol: 23 Issue: 1
- Vol: 23 Issue: 2
- Vol: 23 Issue: 3
- Vol: 23 Issue: 4
- Vol: 23 Issue: 5
- Vol: 23 Issue: 6
- Vol: 20 Issue: 1
- Vol: 20 Issue: 2
- Vol: 20 Issue: 3
- Vol: 20 Issue: 4
- Vol: 20 Issue: 5
- Vol: 20 Issue: 6
- Vol: 21 Issue: 1
- Vol: 21 Issue: 2
- Vol: 21 Issue: 3
- Vol: 21 Issue: 4
- Vol: 21 Issue: 5
- Vol: 21 Issue: 6
- Vol: 13 Issue: 1
- Vol: 13 Issue: 2
- Vol: 13 Issue: 3
- Vol: 13 Issue: 4
- Vol: 13 Issue: 5
- Vol: 13 Issue: 6
- Vol: 14 Issue: 1
- Vol: 14 Issue: 2
- Vol: 14 Issue: 3
- Vol: 14 Issue: 4
- Vol: 14 Issue: 5
- Vol: 14 Issue: 6
- Vol: 15 Issue: 1
- Vol: 15 Issue: 2
- Vol: 15 Issue: 3
- Vol: 15 Issue: 4
- Vol: 15 Issue: 5
- Vol: 15 Issue: 6
- Vol: 16 Issue: 1
- Vol: 16 Issue: 2
- Vol: 16 Issue: 3
- Vol: 16 Issue: 4
- Vol: 16 Issue: 5
- Vol: 16 Issue: 6
- Vol: 10 Issue: 1
- Vol: 10 Issue: 2
- Vol: 10 Issue: 3
- Vol: 10 Issue: 4
- Vol: 10 Issue: 5
- Vol: 10 Issue: 6
- Vol: 11 Issue: 1
- Vol: 11 Issue: 2
- Vol: 11 Issue: 3
- Vol: 11 Issue: 4
- Vol: 11 Issue: 5
- Vol: 11 Issue: 6
- Vol: 12 Issue: 1
- Vol: 12 Issue: 2
- Vol: 12 Issue: 3
- Vol: 12 Issue: 4
- Vol: 12 Issue: 5
- Vol: 12 Issue: 6
- Vol: 30 Issue: 1
- Vol: 30 Issue: 2
- Vol: 30 Issue: 3
- Vol: 30 Issue: 4
- Vol: 30 Issue: 5
- Vol: 30 Issue: 6
- Vol: 29 Issue: 1
- Vol: 29 Issue: 2
- Vol: 29 Issue: 3
- Vol: 29 Issue: 4
- Vol: 29 Issue: 5
- Vol: 29 Issue: 6
- Vol: 28 Issue: 1
- Vol: 28 Issue: 2
- Vol: 28 Issue: 3
- Vol: 28 Issue: 4
- Vol: 28 Issue: 5
- Vol: 28 Issue: 6
- Vol: 17 Issue: 1
- Vol: 17 Issue: 2
- Vol: 17 Issue: 3
- Vol: 17 Issue: 4
- Vol: 17 Issue: 5
- Vol: 17 Issue: 6
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Latest Published Articles
-
Evolution of Physics and Chemistry of Surfaces and Interfaces: A Perspective of the Last 40 Years
May-20 2013 -
Comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinations
May-20 2013 -
Selective area growth of InAs on InP with dielectric mask
May-20 2013 -
Ballistic phonon thermal conductance in graphene nanoribbons
May-16 2013 -
Nickel nanoparticle size and density effects on non-volatile memory performance
May-16 2013
Popular Articles
-
Advanced in situ pre-Ni silicide (Siconi) cleaning at
65 nm to resolve defects inNiSix modulesJan-12 2010 -
Fundamental study of the removal mechanisms of nano-sized particles using brush scrubber cleaning
Xu, K. ; Vos, R. ; Vereecke, G. ; Doumen, G. ; Fyen, W. ; Mertens, P.W. ; Heyns, M.M. ; Vinckier, C. ; Fransaer, J. ; Kovacs, F.Jun-18 2009 -
Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
May-23 2011 -
Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning
Azarnouche, Laurent ; Pargon, Erwine ; Menguelti, Kevin ; Fouchier, Marc ; Joubert, Olivier ; Gouraud, Pascal ; Verove, ChristopheDec-31 2012 -
Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM
Nelson, Florence ; Sandin, Andreas ; Dougherty, Daniel B. ; Aspnes, David E. ; Rowe, Jack E. ; Diebold, Alain C.Jun-11 2012
Publish in this Journal
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Proceedings of the IEEE
Spectrum, IEEE
Popular Articles (March 2013)
Includes the top 25 most frequently downloaded documents for this publication according to the most recent monthly usage statistics.-
1. Advanced in situ pre-Ni silicide (Siconi) cleaning at
65 nm to resolve defects inNiSix modules
|
PDF (596 KB)
-
2. Fundamental study of the removal mechanisms of nano-sized particles using brush scrubber cleaning
Xu, K. ; Vos, R. ; Vereecke, G. ; Doumen, G. ; Fyen, W. ; Mertens, P.W. ; Heyns, M.M. ; Vinckier, C. ; Fransaer, J. ; Kovacs, F. |
PDF (772 KB)
-
3. Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
|
PDF (1139 KB)
-
4. Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning
Azarnouche, Laurent ; Pargon, Erwine ; Menguelti, Kevin ; Fouchier, Marc ; Joubert, Olivier ; Gouraud, Pascal ; Verove, Christophe |
PDF (1825 KB)
-
5. Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM
Nelson, Florence ; Sandin, Andreas ; Dougherty, Daniel B. ; Aspnes, David E. ; Rowe, Jack E. ; Diebold, Alain C. |
PDF (1023 KB)
-
-
7. Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor deposition
|
PDF (650 KB)
-
8. Ultrahigh selective etching of
Si3N4 films overSiO2 films for silicon nitride gate spacer etching |
PDF (344 KB)
-
9. Properties of borophosphosilicate glass films deposited by different chemical vapor deposition techniques
Rojas, S. ; Gomarasca, R. ; Zanotti, L. ; Borghesi, A. ; Sassella, A. ; Ottaviani, G. ; Moro, L. ; Lazzeri, P. |
PDF (1996 KB)
-
-
11. Contact etch stop
a-SixNy:H layer: A key factor for single polysilicon flash memory data retention |
PDF (332 KB)
-
12. Microscopic uniformity in plasma etching
|
PDF (3157 KB)
-
13. Atomic-scale silicon etching control using pulsed Cl
2 plasmaPetit-Etienne, Camille ; Darnon, Maxime ; Bodart, Paul ; Fouchier, Marc ; Cunge, Gilles ; Pargon, Erwine ; Vallier, Laurent ; Joubert, Olivier ; Banna, Samer |
PDF (1824 KB)
-
14. Low temperature oxidation and selective etching of chemical vapor deposition
a-SiC:H filmsBaklanov, M.R. ; Van Hove, M. ; Mannaert, G. ; Vanhaelemeersch, S. ; Bender, H. ; Conard, T. ; Maex, K. |
PDF (123 KB)
-
15. Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source
|
PDF (411 KB)
-
16. Characterization of scratches generated by a multiplaten copper chemical–mechanical polishing process
|
PDF (739 KB)
-
17. In situ measurement of aspect ratio dependent etch rates of polysilicon in an inductively coupled fluorine plasma
|
PDF (200 KB)
-
18. Selective dry etching of oxide films for spacer applications in a high density plasma
|
PDF (200 KB)
-
19. Dependences of bottom and sidewall etch rates on bias voltage and source power during the etching of poly-Si and fluorocarbon polymer using
SF6, C4F8, andO2 plasmas |
PDF (150 KB)
-
20. Ion and neutral transportation consideration in etching of thin
Si3N4 in high aspect ratio structures for aspect ratio independent etching |
PDF (167 KB)
-
-
22. Reactive ion etching of silicon oxynitride formed by plasma‐enhanced chemical vapor deposition
|
PDF (112 KB)
-
-
24. In situ thickness monitoring and control for highly reproducible growth of distributed Bragg reflectors
|
PDF (542 KB)
-
25. High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes
|
PDF (267 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
Further Links
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles. The JVST B has been established to provide a vehicle for the publication of research dealing with microelectronics and nanometer structures. The emphasis will be on processing, measurement and phenomena, and will include vacuum processing, plasma processing, materials and structural characterization, microlithography, and the physics and chemistry of submicron and nanometer structures and devices. The journal also publishes papers from conferences and symposia that are sponsored by the AVS and its divisions. JVST B is published six times annually (Jan/Feb, Mar/Apr, May/Jun, Jul/Aug, Sep/Oct, Nov/Dec) by the AVS through the American Institute of Physics (AIP).
Persistent Link: http://ieeexplore.ieee.org/servlet/opac?punumber=4915583 More »
Frequency: 6
ISSN: 1071-1023
Subjects
- Bioengineering
- Components, Circuits, Devices & Systems
- Engineered Materials, Dielectrics & Plasmas
- General Topics for Engineers (Math, Science & Engineering)
- Photonics & Electro-Optics
Contacts
Editor
Gary E. McGuire
International Technology Center
P.O. Box 13740
Research Triangle Park, NC 27709 27709 USA
jvst@jvst.org
Phone:(919) 824-8479
About this Journal
Author Resources
Title History
- ( 1964 - 1982 ) Journal of Vacuum Science and Technology
Contacts
Editor
Gary E. McGuire
International Technology Center
