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IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Latest Published Articles
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An Effective Capacitance Model for 28-nm and Beyond Copper Interconnect
May-16 2013 -
Unified Endurance Degradation Model of Floating Gate NAND Flash Memory
May-16 2013 -
Transient Off-Current in Junctionless FETs
May-16 2013 -
Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High
${rm I}_{rm ON}/{rm I}_{rm OFF}$ Chung, C.-T. ; Chen, C.-W. ; Lin, J.-C. ; Wu, C.-C. ; Chien, C.-H. ; Luo, G.-L. ; Kei, C.-C. ; Hsiao, C.-N.May-16 2013 -
Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features
May-16 2013
Popular Articles
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A Comparative Study of Different Physics-Based NBTI Models
Mahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A.E. ; Alam, M.A.Feb-20 2013 -
Ballistic
Feb-20 2013 -
SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor
Feb-20 2013 -
AlGaN Channel HEMT With Extremely High Breakdown Voltage
Feb-20 2013 -
Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate
Mar-20 2013
Publish in this Journal
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
Proceedings of the IEEE
Electron Device Letters, IEEE
Electron Devices Society, IEEE Journal of the
Popular Articles (March 2013)
Includes the top 25 most frequently downloaded documents for this publication according to the most recent monthly usage statistics.Society Sponsor
-
1. A Comparative Study of Different Physics-Based NBTI Models
Mahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A.E. ; Alam, M.A.
|
PDF (1802 KB)
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2. Ballistic
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5. Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate
|
PDF (1857 KB)
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6. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Hisamoto, D. ; Wen-Chin Lee ; Kedzierski, J. ; Takeuchi, H. ; Asano, K. ; Kuo, C. ; Anderson, Erik ; Tsu-Jae King ; Bokor, J. ; Chenming Hu |
PDF (136 KB)
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7. High-Performance Silicon Nanotube Tunneling FET for Ultralow-Power Logic Applications
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PDF (990 KB)
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9. Endurance/Retention Trade-off on
Yang Yin Chen ; Goux, L. ; Clima, S. ; Govoreanu, B. ; Degraeve, R. ; Kar, G.S. ; Fantini, A. ; Groeseneken, G. ; Wouters, D.J. ; Jurczak, M. |
PDF (1143 KB)
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10. Meeting the Challenge of Multiple Threshold Voltages in Highly Scaled Undoped FinFETs
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PDF (649 KB)
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11. High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using
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PDF (1737 KB)
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12. Impact of a Spacer–Drain Overlap on the Characteristics of a Silicon Tunnel Field-Effect Transistor Based on Vertical Tunneling
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PDF (1547 KB)
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13. Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs
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PDF (980 KB)
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14. Limitations of the High–Low
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17. Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits
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PDF (280 KB)
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18. Extraction and Analysis of Interface States in 50-nm nand Flash Devices
Chin-Rung Yan ; Chen, J.F. ; Ya-Jui Lee ; Yu-Jie Liao ; Chung-Yi Lin ; Chih-Yuan Chen ; Yin-Chia Lin ; Huei-Haurng Chen |
PDF (1206 KB)
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20. A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory
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PDF (616 KB)
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22. Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering
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PDF (1868 KB)
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25. Analytic Model of S/D Series Resistance in Trigate FinFETs With Polygonal Epitaxy
Chang-Woo Sohn ; Chang Yong Kang ; Myung-Dong Ko ; Do-Young Choi ; Hyun Chul Sagong ; Eui-Young Jeong ; Chan-Hoon Park ; Sang-Hyun Lee ; Ye-Ram Kim ; Chang-Ki Baek ; Jeong-Soo Lee ; Lee, J.C. ; Yoon-Ha Jeong |
PDF (1959 KB)
HTMLAims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
Further Links
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
Publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanotechnology, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
Persistent Link: http://ieeexplore.ieee.org/servlet/opac?punumber=16 More »
Frequency: 12
ISSN: 0018-9383
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Subjects
- Components, Circuits, Devices & Systems
- Engineered Materials, Dielectrics & Plasmas
Contacts
Marlene James
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m.james@ieee.org
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
777 Atlantic Drive, N.W.
Georgia Institute of Technology
Atlanta, GA 30332-0250 USA
cressler@ece.gatech.edu
Phone:+1 404 894 5161
Fax:+1 404 894 4641
About this Journal
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Title History
Contacts
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
