GaAsSb resonant-cavity-enhanced photodetector operating at 1.3 μm

We demonstrate a GaAsSb resonant-cavity-enhanced p-i-n photodetector grown on a GaAs substrate. The device exhibited a peak external quantum efficiency of 54% at the wavelength of 1.3 μm and a full-width at half-maximum of 8 nm. The breakdown voltage was 12 V and avalanche gain up to ten was observed. The absorption coefficient (/spl alpha/) of GaAs/sub 0.65/Sb/sub 0.35/ at 1.3 μm is estimated to be /spl sim/7.3×10
³
/cm.