A compact approach for the design of a dual-band low-noise amplifier

A compact approach for the design of a dual-band LNA is devised. The proposed dual-band integrated LNA features a minimum number of devices that reduces the physical layout and makes it area-efficient. Band selection is controlled by three switches that guarantee good input/output matching, adequate forward gain and low noise figure. The LNA circuit has been designed and simulated using a 0.8 /spl mu/m SiGe Bi-CMOS technology. Simulation results for the GSM 900 MHz and DCS 1800 MHz bands indicate that the achieved NF is < 2 dB, forward gain is > 18 dB and IIP3 is > -7 dBm while consuming 15 mW from a 2.7 V supply for both the two bands.